首页> 外文期刊>The European physical journal, D. Atomic, molecular, and optical physics >Absolute total cross-section measurements for electron scattering from silicon tetrachloride, SiCl_4, molecules
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Absolute total cross-section measurements for electron scattering from silicon tetrachloride, SiCl_4, molecules

机译:四氯化硅,SiCl_4分子中电子散射的绝对总截面测量

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The absolute total cross-sections for electron scattering on SiCl_4 molecules have been measured in two distinct electron-transmission experiments, in Gdansk and in Trento laboratory, for impact energy ranging from 0.3 to 250 eV and from 75 to 4000 eV, respectively. The e~--SiCl_4 total cross-section function shows two very distinct resonant-like features: the strong peak at 1.9 eV and much broader main maximum centered near 10 eV with some additional substructure close to 5 eV. The present results are compared with low-energy total experimental data and elastic theoretical calculations for electron collisions with silicon tetrachloride molecules.
机译:在两个不同的电子传输实验中,分别在格但斯克和特伦托实验室中测量了SiCl_4分子上电子散射的绝对总横截面,其冲击能分别为0.3至250 eV和75至4000 eV。 e〜--SiCl_4的总横截面函数显示出两个非常不同的类似共振的特征:1.9 eV处的强峰和中心在10 eV附近的更宽的主最大值,以及一些接近5 eV的附加子结构。目前的结果与低能量的总实验数据和弹性理论计算进行了比较,以进行电子与四氯化硅分子的碰撞。

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