Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

Umirzakov B.E.; Tashmukhamedova D.A.; Ruzibaeva M.K.; Tashatov A.K.; Donaev S.B.; Mavlyanov B.B.

首页> 外文期刊>Technical physics >Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

【24h】

Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

机译：外延和离子注入方法制备的异质结构纳米膜的结构和性能分析

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF_2 is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined.

机译：构建了基于Si，GaAs和CaF_2形成的多层纳米薄膜系统的能带图。确定获得复杂组成的均质膜的最佳方案。

著录项

来源
《Technical physics》 |2013年第9期|共4页
作者
Umirzakov B.E.; Tashmukhamedova D.A.; Ruzibaeva M.K.; Tashatov A.K.; Donaev S.B.; Mavlyanov B.B.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类 Tb13;
关键词
Analysis; structure; methods;

机译：分析;结构;方法;

相似文献

外文文献
中文文献
专利

1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods [J] . Umirzakov B.E., Tashmukhamedova D.A., Ruzibaeva M.K., Technical physics . 2013,第9期

机译：外延和离子注入方法制备的异质结构纳米膜的结构和性能分析
2. The structure, optical and magnetic properties of arsenic implanted ZnO films prepared by molecular beam epitaxy [J] . Ying Minju, Wang Shida, Duan Tao, Materials Letters . 2016,第may15期

机译：分子束外延制备砷注入ZnO薄膜的结构，光学和磁性
3. Analysis of the gain and luminescence properties of Si/Si1-xGex : Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase [J] . Krasilnikova LV, Stepikhova MV, Drozdov YN, Physics of the solid state . 2005,第1期

机译：气相中升华分子束外延产生的Si / Si1-xGex：Er / Si异质结构的增益和发光特性分析
4. Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures [C] . Boroumand, F.A., Khalid, . 1996

机译：在高温和低温下制备的外延缓冲层上，通过离子注入和外延形成的隔离GaAs结构之间的低频导纳的观察
5. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy. [D] . Jiao, Wenyuan. 2015

机译：分子束外延制备InAlN / GaN异质结构的性能。
6. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy [O] . M Henini 2006

机译：分子束外延生长量子点异质结构的性质及应用
7. Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure [O] . -1

机译：通过分子束外延制备的单晶锑膜：2D材料异质结构的选择性生长和接触电阻降低

Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

摘要

著录项

相似文献

相关主题

期刊订阅