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Specific features of the photoelectric properties of structures based on mesoporous silicon with silver nanoparticles

机译:基于介孔硅和银纳米粒子的结构的光电特性的特定特征

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Electrical and photoelectric properties of porous silicon with introduced silver nanoparticles have been studied. It is shown that in the "dark-light-dark" operation mode, an abrupt jump of the dark current is observed upon illumination (with light spectrally close to sunlight), which is three to five times the initial dark current and the photocurrent. The voltages at which these abrupt changes in current are observed correspond to the range of existence of traps formed when the starting mesoporous silicon is obtained. It was found that the increased value of the dark current exhibits a long-term memory effect. The "current jump" can be attributed to the maximum capture of the generated photocarriers by traps, followed by their release in an electric field after the illumination.
机译:已经研究了具有引入的银纳米颗粒的多孔硅的电和光电性质。结果表明,在“暗-暗-暗”操作模式下,在照明(光谱上接近太阳光)下观察到暗电流的突然跳跃,这是初始暗电流和光电流的三到五倍。观察到这些电流突然变化的电压对应于获得初始中孔硅时形成的陷阱的存在范围。发现暗电流值的增加表现出长期记忆效应。 “电流跃变”可归因于阱对捕获的产生的光载流子的最大捕获,随后是它们在照明后在电场中的释放。

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