Quantum dot diode lasers for optical communication systems

摘要

Basic technological and physical aspects of injection lasers based on arrays of self-organised InAs/InGaAs quantum dots on GaAs substrates for optical communication systems in the 1.2-1.3 mu m spectral range are considered. The possibility of simultaneous lasing at a great nimber of longitudinal modes at a high power level and low noise is demonstrated. The use of these lasers in wavelength-division-multiplexing systems based on the spectral separation of the laser output spectrum is substantiated.