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首页> 外文期刊>Progress in photovoltaics >The Implementation of Temperature Control to an Inductive-Coil Photoconductance Instrument for the Range of 0-230 deg C
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The Implementation of Temperature Control to an Inductive-Coil Photoconductance Instrument for the Range of 0-230 deg C

机译:0-230摄氏度范围内感应线圈光电导仪器温度控制的实现

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摘要

A new device setup for temperature and injection-dependent lifetime spectroscopy (TIDLS) is described. It comprises two off-the-shelf components: a heating and cooling stage (HCS) from INSTEC and an inductive-coil photoconductance (PC) instrument (WCT-100) from Sinton Consulting Inc. The HCS was fitted to the WCT-100 in a manner that circumscribes the inductive coil (the sensor) of the RF bridge circuit and controls the temperature of the wafer effectively. This setup has the advantage of requiring minor modifications to industry standard instruments while attaining a large temperature range. As experimental verification, injection-dependent lifetimes were measured over a temperature range, 0-230 deg C, in three iron-implanted silicon wafers. The measured lifetimes are consistent with the Shockley-Read-Hall equation using the impurity concentration calculated from the implant dose and the energy level and capture cross-sections of interstitial iron from the literature.
机译:描述了一种用于温度和注入相关寿命光谱(TIDLS)的新设备设置。它包括两个现成的组件:INSTEC的加热和冷却台(HCS)和Sinton Consulting Inc.的感应线圈光电导(PC)仪器(WCT-100)。HCS安装在WCT-100一种外接RF桥电路的感应线圈(传感器)并有效控制晶片温度的方式。这种设置的优点是在达到较大温度范围的同时,需要对工业标准仪器进行少量修改。作为实验验证,在3个注入铁的硅晶片中,在0-230℃的温度范围内测量了取决于注入的寿命。所测量的寿命与肖克利-雷德-霍尔方程相吻合,后者使用的杂质浓度由注入剂量和能级计算得出,并且从文献中获取了间隙铁的截面。

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