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17.6 percent Efficient Tricrystalline Silicon Solar Cells with Spatially Uniform Texture

机译:具有空间均匀纹理的17.6%高效三晶硅太阳能电池

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Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm~2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. Iii this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus-diffused n~+p junction silicon solar cells with a silicon-dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6 percent has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37 mA/cm~2 obtained by substantially reduced reflection and enhanced light trapping.
机译:到目前为止,在三晶直拉晶体生长的硅(tri-Si)上制造的太阳能电池显示出相对较低的短路电流密度,约为31-33 mA / cm〜2,这是因为三个{110}取向的晶粒无法有效地通过常用的各向异性蚀刻溶液。在这项工作中,我们为三硅优化了一种新颖的化学制绒步骤,并将其成功集成到我们的太阳能电池工艺中。制造了具有二氧化硅钝化后表面和蒸发的铝触点的金属/绝缘体/半导体接触的磷扩散的n〜+ p结硅太阳能电池,其在电池两侧的所有三个晶粒上具有空间均匀的表面纹理。尽管处理顺序和单元结构简单,但已实现独立确认的记录效率为17.6%。这种优异的效率主要是由于通过显着减少反射并增强了光捕获获得的增加的37 mA / cm〜2的短路电流密度。

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