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Double Temperature and Density Phenomenon in Grid Enhanced Plasma Source Ion Implantation for Inner Surface Modification of Tubes

机译:网格增强等离子体源离子注入中的双重温度和密度现象,用于管子的内表面改性

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Inner surface coating for tubular samples was realized by the grid enhanced plasma source ion implantation (GEPSII) method. In the GEPSII system, two electrodes, a central rod electrode and a coaxial grid electrode were coaxially assembled inside the tube. Plasma was generated between the electrodes by a radio-frequency (RF) oscillating power source. Plasma then diffused through the grid and realized inner surface ion implantation by a negative high voltage applied to the tube. The plasma was then divided, by the grid, into two regions, namely the source plasma region and the diffused plasma region. The plasma's self-bias between two RF power source electrodes was measured. At the same time, the electron temperature and plasma density in the GEPSII system were measured by a scattering spectrometer. Results showed that the plasma properties of the two regions were entirely different; the plasma self-bias, which might greatly affect the sputtering rate of the central titanium electrode, depended on the electrode structure, gas pressure and RF power.
机译:管状样品的内表面涂层是通过网格增强等离子体源离子注入(GEPSII)方法实现的。在GEPSII系统中,两个电极,一个中心杆电极和一个同轴栅格电极同轴地组装在管内。通过射频(RF)振荡电源在电极之间产生等离子体。然后,等离子体通过栅格扩散,并通过向管施加负高压来实现内表面离子注入。然后,通过栅格将等离子体分为两个区域,即源等离子体区域和扩散等离子体区域。测量了两个RF电源电极之间的等离子体自偏压。同时,通过散射光谱仪测量GEPSII系统中的电子温度和等离子体密度。结果表明,两个区域的等离子体性质完全不同。等离子体的自偏压可能会极大地影响中心钛电极的溅射速率,取决于电极结构,气压和射频功率。

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