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Mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions

机译:非简并二维电子通过杂质离子的相关分布在散射中的迁移率

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摘要

The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the Al_xGa_(1 - x)As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane. The influence of the form of the structure factor in the electron mobility has been considered.
机译:以Al_xGa_(1-x)As / GaAs异质结构为例,研究了非简并二维电子在杂质间隙较窄的异质结构中的散射引起的反向迁移率的温度依赖性。在平面上的硬球模型中,已经考虑到了杂质离子排列的相关性。已经考虑了结构因子的形式对电子迁移率的影响。

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