Morphology of heteroepitaxial beta-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors

摘要

The characteristics of cubic silicon carbide films grown on silicon through high-vacuum chemical vapor deposition (HVCVD) from hexane vapors are investigated using scanning probe microscopy and x-ray diffraction. The surface morphology and structure of the films are analyzed as a function of the thickness of the deposited films and the nature of the substrate (silicon, sapphire). The role of different diffusion fluxes arising in the structure and the related possible mechanisms of growth of beta-SiC layers on silicon substrates are discussed.