首页> 外文期刊>Physical Review, B. Condensed Matter >DETERMINATION OF THE ELECTRONIC DENSITY OF STATES NEAR BURIED INTERFACES - APPLICATION TO CO/CU MULTILAYERS
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DETERMINATION OF THE ELECTRONIC DENSITY OF STATES NEAR BURIED INTERFACES - APPLICATION TO CO/CU MULTILAYERS

机译:埋入式界面附近状态的电子密度的确定-在CO / CU多层中的应用

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摘要

High-resolution L(3) x-ray absorption and emission spectra of Co and Cu in Co/Cu multilayers are shown to provide unique information on the occupied and unoccupied density of d states near buried interfaces. The d bands of both Co and Cu interfacial layers are shown to be considerably narrowed relative to the bulk metals, and for Cu interface layers the d density of states is found to be enhanced near the Fermi level. The experimental results are confirmed by self-consistent electronic structure calculations. [References: 27]
机译:显示了Co / Cu多层膜中Co和Cu的高分辨率L(3)x射线吸收和发射光谱,可提供有关掩埋界面附近d状态的占据和未占据密度的独特信息。 Co和Cu界面层的d带都显示出相对于块状金属明显变窄,并且对于Cu界面层,发现d态密度在费米能级附近得到增强。实验结果通过自洽的电子结构计算得到证实。 [参考:27]

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