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Peculiarities of superconductivity in the single-layer FeSe/SrTiO3 interface

机译:FeSe / SrTiO3单层界面的超导特性

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Observation of replica bands in the angle-resolved photoemission spectroscopy (ARPES) spectra of single-layer FeSe on a strontium titanate substrate revealed a phonon component contribution to mechanisms behind its high-T-c superconductivity. We study the interaction of the in-layer FeSe electrons with the electric potential of the longitudinal (LO) modes at the surface of bulk SrTiO3. A two-dimensional system of charges at the FeSe/SrTiO3 interface includes both the itinerant and the immobile electrons. The latter significantly change the interface characteristics, increasing screening at the substrate surface and thereby reducing the strength of the electron-LO-phonon interaction. In what follows, the dielectric constant serves as a free parameter and is determined using the ARPES measurements of the replicas. Two-dimensional Coulomb screening is accounted for in the random-phase approximation. It is shown that the model is applicable over the entire range of the parameters typical for current experiments. The estimates from this model make possible the conclusion that the LO-phonon-mediated pairing alone cannot account for the temperatures of the superconducting transitions T-c in the single-layer FeSe/SrTiO3 reported in these experiments. This does not exclude that the LO-phonon mechanisms can become more significant in differently and better prepared single-layer FeSe films. Available experiments are briefly discussed. Thus far no measurements exist on the dependence of T-c on the concentration of electrons doped into the in-layer FeSe band.
机译:在钛酸锶基底上的单层FeSe的角度分辨光发射光谱(ARPES)光谱中观察复制带,发现声子组分对其高T-c超导性背后的机理有贡献。我们研究了层内FeSe电子与块状SrTiO3表面纵向(LO)模势的相互作用。 FeSe / SrTiO3界面处的二维电荷系统包括流动电子和固定电子。后者显着改变了界面特性,增加了在基板表面的屏蔽,从而降低了电子-LO-声子相互作用的强度。在下文中,介电常数用作自由参数,并使用副本的ARPES测量确定。二维库仑筛选是在随机相位近似中考虑的。结果表明,该模型适用于当前实验典型参数的整个范围。根据该模型的估计,可以得出以下结论:仅LO声子介导的配对不能解释这些实验中报道的单层FeSe / SrTiO3中超导转变温度T-c。这并不排除LO-声子机制在不同且制备更好的单层FeSe薄膜中会变得更加重要。简要讨论了可用的实验。到目前为止,还没有关于T-c对掺杂到层内FeSe带中电子浓度的依赖性的测量。

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