MICROSCOPIC STRUCTURE OF GASB(001) C(2X6) SURFACES PREPARED BY SB DECAPPIUG OF MBE-GROWN SAMPLES

摘要

In this study we report on the microscopic structure of GaSb(001) c(2 x 6) surfaces prepared by Sb decapping. Molecular beam epitaxy grown GaSb(001) layers capped with a protective Sb layer were transferred through the atmosphere into an UHV-analysis system and investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). After thermal desorption of the capping layer clear c(2 x 6) LEED patterns were observed. STM images show flat surface areas with a rowlike, somewhat disordered structure. High-resolution images resolve individual Sb dimers on the surface. The surface is covered by an incomplete layer of dimerized Sb, adsorbed on a complete second layer of Sb, which is also dimerized in that regions not covered by the fractional Sb top layer. [References: 11]