机译:Maskless selective growth and doping of GaAs using a low energy focused ion beam for in-situ micro-device structures fabrication, and its evaluation
机译:Low temperature growth of GaAs{sub}(1-x-y)P{sub}yN{sub}x and In{sub}zGa{sub}(1-z)P{sub}(1-x)N{sub}x layers with high nitrogen composition and improvement of crystallinity by atomic hydrogen irradiation