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Symposium on state-of-the-art program on compound semiconductors

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1.SiGe heterojunction bipolar transistors with 156 GHz transit frequency

机译：具有156 GHz传输频率的SiGe异质结双极晶体管
- 作者：A.Gruhle;H.Kibbel;A.Schurr;D.Behammer;U.Koenig;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
2.Room temperature single electron transistor by AFM nano-oxidation process: coincidence in experimental and theoretical results

机译：房间温度单电子晶体管通过AFM纳米氧化过程：巧合实验和理论结果
- 作者：K.Matsumoto;Y.Gotoh;T.Maeda;J.Harris;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
3.High quality AlN and GaN on Si(111) by MBE with ammonia

机译：用氨的MBE含氨（111）的高品质ALN和GAN
- 作者：S.Nikishin;N.Faleev;S.N.G.Chu;H.Temkin;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
4.Growth Mechanism in the multiple buffer layer of GaN on sapphire by organometallic vapor phase epitaxy

机译：用有机金属气相外延对蓝宝石多缓冲层的生长机制
- 作者：C.-C.Yang;M.-C.Wu;Y.-C.Hung;G.-C.Chi;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
- GaN;
- multi-layer;
- etch-pits density (EPD);
- TEM;
- organometallic vapor phase epitaxy (OMVPE);
5.Properties of Semi-Insulating GaAs:Fe Grown by Hydride Vapour Phase Epitaxy

机译：半绝缘GaAs的性质：氢化物气相外延生长
- 作者：E.Rodriguez Messmer;D.Soderstrom;P.Hult;S.Marcinkevicius;S.Lourdudoss;D.C.Look;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
6.Hot-electron-induced degredation of high efficiency AlGaAs / InGaAs / AlGaAs PHEMTs

机译：热电子诱导的高效allaas / Ingaas / Algaas通风口的降解
- 作者：Y.Tkachenko;A.Klimashov;C.Wei;Y.Zhao;M.Hua;D.Bartle;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
7.MOCVD Growth of AlGaInN for UV Emitters

机译：用于UV发射器的Algainn的MOCVD生长
- 作者：J.Han;M.Crawford;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
8.Characterizations of ion-implanted GaAs substrates by optically excited terahertz radiation

机译：光学激发太赫兹辐射对离子植入的GaAs基材的特征
- 作者：G.-R.Lin;C.L.Pan;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
9.GaInNAs / AaAs: A novel material system for many applications

机译：GAINNAS / AAAS：许多应用的新型材料系统
- 作者：C.W.Tu;M.Sopanen;H.P.Xin;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
10.Measurement services for optoelectronics at the national institute of standards and technology

机译：国家标准与技术研究所光电子测量服务
- 作者：S.Bruce;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
11.High-efficiency, low voltage compound semiconductor devices for microwave and MM-Wave power amplifiers

机译：用于微波和MM波功率放大器的高效率，低压化合物半导体器件
- 作者：L.Sloan;V.Hietala;P.C.Chao;W.Kong;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
12.Deuterium introduction into 6H and 3C-SiC crystals and thermal stability with annealing

机译：氘介绍了6小时和3C-SIC晶体和退火的热稳定性
- 作者：J.M.Zavada;R.G.Wilson;S.J.Pearton;B.K.Lee;A.J.Steckl;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
13.Optimization of InGaAs/InP DHBT devices for use in high speed circuits

机译：InGaAs / InP DHBT器件用于高速电路的优化
- 作者：R.F.Kopf;Y.-C.Wang;R.A.Hamm;R.W.Ryan;A.Tate;M.A.Melendes;R.Pullela;G.Georgiou;J.-P.Mattia;Y.Baeyens;H.-S.Tsai;Y.-K.Chen;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
14.Sidewall effects on dc and ac performance of III-V compound FET's

机译：III-V复合FET的DC和AC性能的侧壁效应
- 作者：H.R.Chen;G.L.Huang;P.L.Cheng;G.Y.Lai;W.S.Lour;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
15.Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP applications

机译：INP / INGAAS HBT和INALAS / INGAAS HBT对ULP应用的比较
- 作者：P.C.Chang;A.G.Baca;J.F.Klem;M.J.Hafich;C.I.H.Ashby;V.M.Hietala;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
16.Application of impedance technique to characteriza anodic oxides on PbSe surfaces

机译：阻抗技术在PBSE曲面特征阳极氧化物中的应用
- 作者：D.G.Ebling;H.Meincke;J.Heinze;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
17.The structural, chemical and electronic properties of a stable GaS/GaAs interface

机译：稳定气体/ GaAs界面的结构，化学和电子性质
- 作者：H.T.Hu;X.-A.Cao;X.-M.Ding;X.-Y.Hou;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
18.Dual-Side wafer processing and resonant tunneling transistor applications

机译：双侧晶片处理和谐振隧道晶体管应用
- 作者：J.Moon;J.Simmons;J.Wendt;V.Hietala;J.Reno;W.Baca;M.Blount;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
19.In-situ monitoring of crystal growth using specular ion current oscillations

机译：使用镜面离子电流振荡的晶体生长的原位监测
- 作者：P.M.Deluca;K.C.Ruthe;S.A.Barnett;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
20.Formation of p-type gallium nitride with zinc ion implantation

机译：用锌离子注入形成p型氮化镓
- 作者：C.C.Chang;G.C.Chi;J.R.Dun;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
- gallium nitride;
- ion implantation;
- activation;
- annealing;
21.Reduced Cavity loss for ultra-low threshold vertical cavity surface emitting lasers

机译：对超低阈值垂直腔表面发射激光器的腔损失降低
- 作者：D.L.Huffaker;Z.Zou;D.G.Deppe;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
22.Electronic books: requirements for displays and storage

机译：电子书：显示和存储的要求
- 作者：V.McCrary;J.Roberts;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
23.Base pushout and high current effects in InP-based Pnp heterojunction bipolar transistors

机译：基于INP的PNP异质结双极晶体管的基础推路和高电流效应
- 作者：S.Datta;K.P.Roenker;M.M.Cahay;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
24.Various spectroscopic studies of single quantum dots using highly sensitive near-field scanning optical microscope

机译：一种使用高敏感近场扫描光学显微镜的单量子点的各种光谱研究
- 作者：T.Saiki;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
25.Interfacial reactions between metals and gallium nitride

机译：金属和氮化镓之间的界面反应
- 作者：M.Ahonen;B.Liu;A.Davydov;E.Ristolainen;P.Holloway;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
26.Self-Aligned 0.2 - 0.6 mu m T-gate microwave FET's

机译：自对齐0.2 - 0.6 mu M T型栅极微波FET
- 作者：W.S.Lour;Y.M.Shih;G.Y.Lai;P.L.Cheng;H.R.Chen;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
27.Polarized response in normal incidence InAs quantum dot infrared photodetectors

机译：常规入射INAS量子点红外光电探测器的偏振响应
- 作者：S.Maimon;V.Immer;E.Finkman;G.Bahir;S.E.Schacham;O.Gauthier-Lafaye;S.Herriot;F.H.Julien;M.Gendry;J.Brault;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
28.Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy

机译：选择性区域外延三角形IngaAs / GaAs量子线结构的制造与表征
- 作者：S.-I.Kim;Y.K.Park;Y.T.Kim;H.H.Tan;C.Jagadish;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
29.GaInP/GaAs compatible E/D - mode d - HEMT's

机译：GAINP / GAAS兼容E / D - 模式D - HEMT
- 作者：H.T.Chen;M.-Y.Wu;P.L.Cheng;G.Y.Lai;W.S.Lour;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年
30.Development of multi-functional ohmic contacts for both n and p-GaAs

机译：用于N和P-GaAs的多功能欧姆接触的开发
- 作者：M.Ogura;M.Murakami;M.Nakamura;M.Wada;The Electrochemical Society
- 会议名称：《Symposium on state-of-the-art program on compound semiconductors》 | 1999年