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名称
申请/专利权人
公开/公告日
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TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-04-30
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TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-04-30
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-04-30
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NIDEC SANKYO CORPORATION;
2020-03-26
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SANDISK TECHNOLOGIES LLC;
2020-05-07
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TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-04-02
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-04-02
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INTEL CORPORATION;
2020-04-02
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【机译】
通过改善扭矩来改善磁直接访问存储器（MRAM）的磁性层
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-02-27
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-02-20
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-02-20
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【机译】
具有差分二元，非挥发性存储细胞结构的可配置精密神经网络
SANDISK TECHNOLOGIES LLC;
2020-01-30
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-04-30
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-01-16
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-01-16
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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;
2020-01-16
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【机译】
使用模式寄存器写入命令进行写入时钟的占空比的训练的单芯片系统，单芯片系统的操作方法，具有单芯片系统的电子设备
SAMSUNG ELECTRONICS CO. LTD.;
2020-04-30
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TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-04-30
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TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
2020-01-16
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X-FAB SEMICONDUCTOR FOUNDRIES GMBH;
2020-01-16
