130 nm SiGe BiCMOS Processes Optimize Cost and Performance

摘要

Sllicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are capable of much better per-rnIformance than comparably sized CMOS devices. This technology advantage is critical for wireless applications designed in SiGe BiCMOS that require integration of high performance analog blocks such as a low noise front end or power amplifiers in a System-on-Chip (SoC) solution. The addition of the SiGe HBT provides the low power RF building blocks that are not available in advanced CMOS and complements the advanced digital integration of the SoC.