PowerTrench MOSFET Addresses Low Conduction and Switching Losses

摘要

Fairchild Semiconductor developed the FDMS86500L N-Channel, PowerTrench MOSFET to minimize conduction loss, switch node ringing, and to improve the overall efficiency of DC-DC converters. Through an advanced package and silicon combination, the FDMS86500L provides significantly lower RDS(ON) (2.5m? @ VGS = 10y ID=25A), enabling lower conduction losses in an industry-standard 5mm x 6mm Power 56 package. The device uses shielded-gate MOSFET technology, provides very low switching losses (Qgd 14.6 nC Typ.). When combined with the device's low conduction losses, this provides designers the improved power density they need.