熱電対を用いた原子状酸素の再結合係数測定装置の開発

摘要

アッシソグやエッチングなどの反応性プロセスにおいて，rn反応装置の材質や表面処理はアッシソグやエッチングのレーrnトや分布に大きく影響を及ばすことが知られている．たとえrnば酸素を用いたアッシングの場合，反応種は原子状酸素であrnり，原子状酸素の各部材表面での再結合係数γ_oが異なるこrnとが装置のレートや分布を変動させる原因となる．%We developed the equipment that measured the recombination coefficient of the atomic oxygen from heat balance of the temperature sensor referring to the method of measuring the recombination coefficient of the atomic hydrogen.rnWe added the following two improvements to the method for calculating the recombination coefficient of hydrogen: Firstly, to suppress the influence of thermal radiation from a plasma radiation source as much as possible, we set the sensor to the position that the sensor was not exposed to the radiation from plasma directly, that the sensor Secondly, we made it possible for sensors to measure higher temperatures in some areas. The source of the oxygen radicals was microwave plasma operating at 900 W for O_2 pressures of 126 Pa. The measured atomic oxygen recombination coefficients on quartz and chemically polished aluminum alloy (Alpika~®) surfaces were 1.94 × 10~(-4) and 3.75 × 10~(-3), respectively.