アモルファスフッ素樹脂をゲート絶縁膜とした有機電界効果トランジスタ

摘要

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy) (P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Poly-ethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm~2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.%絶縁層にCYTOP薄膜を用いたOFETに比べ，PIとrnCYTOPの二重構造の絶縁層を有するOFETはON/OFF比rnの向上が見られた．しかしながら，移動度は一桁低い値となrnった．これは絶縁層表面の平滑性に密接に関係することが考rnえられる．