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机译:通过磁控溅射,增强了原位高真空退火的Bi_(1-X)Sb_x薄膜的热电电源系数
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China;
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China;
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China;
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China;
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China;
Hangzhou Innovat Inst Beihang Univ Key Lab Intelligent Sensing Mat & Chip Integrat T Hangzhou 310051 Peoples R China|Beihang Univ Res Inst Frontier Sci Beijing 100191 Peoples R China;
Bismuth antimony; In-situ annealing; Dirac band; Carrier mobility; Thermoelectric property;
机译:氢气环境下退火的p型(Bi_(1-x)Sb_x)_2Te_3薄膜的热电性能
机译:(Bi_(1-x)Sb_x)_2Te_3热电薄膜的脉冲电沉积
机译:g锑浓度对通过金属有机化学气相沉积(MOCVD)技术生长的(Bi_(1-x)Sb_x)_2Te_3薄膜的电和热电性能的影响
机译:使用不对称双极脉冲DC磁控溅射技术通过Al-掺杂来增强ZnO薄膜热电功率因数的研究
机译:通过控制退火实验研究异质外延Si(1-x)Ge(x)薄膜的形态不稳定性和缺陷形成
机译:更正:SinnarasaI。等。射频磁控溅射制备铜铁矿CuCrO2:Mg薄膜的热电和输运性质。纳米材料20177157
机译:不对称双极脉冲直流磁控溅射技术掺铝提高ZnO薄膜热电功率因数的研究