机译:热退火对Si和Al_2O_3基板溅射PT薄膜温度依赖性行为的影响
Natl Key Lab Sci & Technol Micro Nano Fabricat Shanghai Peoples R China|Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Shanghai 200240 Peoples R China;
Natl Key Lab Sci & Technol Micro Nano Fabricat Shanghai Peoples R China|Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Shanghai 200240 Peoples R China;
Natl Key Lab Sci & Technol Micro Nano Fabricat Shanghai Peoples R China|Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Shanghai 200240 Peoples R China;
East China Normal Univ High Sch 2 Shanghai Peoples R China;
Shanghai Inst Satellite Engn Shanghai 201109 Peoples R China;
Natl Key Lab Sci & Technol Micro Nano Fabricat Shanghai Peoples R China|Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Shanghai 200240 Peoples R China;
Natl Key Lab Sci & Technol Micro Nano Fabricat Shanghai Peoples R China|Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Shanghai 200240 Peoples R China;
Annealing; Platinum; Thin films; Temperature coefficient of resistance; Temperature sensor;
机译:热退火对溅射在Si和Al_2O_3衬底上的Pt薄膜的温度依赖性电阻行为的影响
机译:SiO_x和Al_2O_3衬底对共沉积溅射沉积参数对Ti / Pt膜生长的影响以及电阻随温度的变化
机译:溅射氮化钛薄膜的衬底和退火温度相关电阻率
机译:电阻切换行为依赖于磁控溅射沉积的ZnMN_2O_4膜的衬底温度
机译:溅射沉积的二氧化f单层和二氧化ha-氧化铝纳米层压薄膜的结构,光学性能和热稳定性。
机译:通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
机译:磁控溅射沉积的ZnMN2O4薄膜的基板温度依赖性的电阻切换行为