Microstructure and electroluminescence of ZnS:Mn doped with KCl

摘要

The microstructure and electroluminescence (EL) characteristics of ZnS:Mn doped with KCl for alternating current thin film electroluminscent devices deposited by a RF sputter systems form ZnS and Mn targets are investigated. Transmission electron microscopy (TEM), X-ray diffractometry, energy dispersive spectrometry (EDS), secondary ion mass spectrometry, EL brightness and luminous efficiency (η) measurements were carried out. The as-deposited films have a 100 nm layer of equiaxed grains at the insulator /phosphor interface and columnar grains in the rest of the film.