Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures

摘要

In this paper we report a systematic investigation of emission properties of microcavity devices [resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers (VCSELs)] fabricated from molecular beam epitaxy (MBE)-grown heterostructures. The optimization of such structures requires proper tuning of the wavelength of radiation emitted from the quantum-well active region, the peak reflectivity of Drs and the cavity resonance. We demonstrate results of two techniques used to study InGaAs/GaAs RC LED and VCSEL structures.