Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE

摘要

The design of the vertical cavity surface emitting laser (VCSELs) needs proper tuning of many different optical parameters of those structures. So, the optimisation of the VCSELs requires deep understanding of optical processes occurring in the active regions of such lasers. In a series of MBE processes, active regions of VCSELs as well as the whole VCSELs were grown. The active regions of the VCSEL structures were designed for λ=1000 nm and 980 emission. They consisted of a pair of distributed Bragg reflectors (DBRs) composed of AlAs and GaAs quarter wavelength layers and a cavity made of GaAs.