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Optimization of CBD CdS process in high-efficiency Cu(In,Ga)Se_2-based solar cells

机译:高效Cu(In,Ga)Se_2基太阳能电池中CBD CdS工艺的优化

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摘要

We present an optimization of the CdS chemical bath deposition process as applied to high-efficiency Cu(In,Ga)Se_2 photovoltaic thin-film absorber materials. Specifically, we investigated deposition time (thickness), bath temperature (65, 80 and 90 deg. C) and a Cd~2+ partial-electrolyte treatment of the chalcopyrite absorber prior to CdS deposition. We found that thinner CdS layers (grown On as-deposited absorbers) allowing more light to reach the junction are not necessarily conductive to higher short-circuit current Density.
机译:我们介绍了应用于高效率Cu(In,Ga)Se_2光伏薄膜吸收剂材料的CdS化学浴沉积工艺的优化。具体来说,我们研究了在CdS沉积之前,黄铜矿吸收体的沉积时间(厚度),浴温(65、80和90℃)和Cd〜2 +部分电解质处理。我们发现,允许更多的光到达结的更薄的CdS层(在沉积的吸收体上生长)不一定会导致更高的短路电流密度。

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