The influence of the amorphous silicon deposition temperature on the efficiency of the ITO/A-Si:H/C-Si heterojunction (HK) solar cells and properties of interfaces

摘要

Some crucial limiting process steps of ITO/(n)a-Si:H/(p)c-Si solar cell manufacturing were investigated. The influence of amorphous silicon deposition temperature on the efficiency of heterojunction (HJ) solar cells as well as ITO deposition on the properties of ITO/a-Si:H/c-Si interfaces were studied. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and SIMS measurements were employed for the investigations. It was observed that the decrease in a-Si:H deposition temperature from 230 down to 100 deg. C leads to a reduction in solar cell efficiencies to only 1/100