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Facile modulation of single source precursors: the synthesis and characterization of single source precursors for deposition of ternary chalcopyrite materials

机译:单源前体的简便调制:用于沉积三元黄铜矿材料的单源前体的合成和表征

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In this paper, the systheses and thermal modulation of ternary single source precursors, based on the [{ER_3}_2Cu(YR')_2In(YR'_2] architecutre in good yields are described (E=P, As, Sb; Y=S, Se, and R=alkyl, aryl). Most importantly, we have successfully prepared the firs liquid CuInS_2 (CIS) single source precursors, (when R=Bu, Y=S, and R'= Et, or Pr). These new compounds were utilized for spray chemical vapor deposition (CVD) of copper indium disulfide, an Absorber layer for the fabrication of thin-film solar cells. Thermogravimetric analyses (TGA) and Differential Scanning Caloriometry (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five donor And/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursor. Preliminary studies show that these derivatives produce CuInS_2 thin-films at low temperature. X-Ray diffraction studies, EDS and SEM confirmed the formation of the single-phase CuInS_2 thin-films.
机译:在本文中,描述了基于[{ER_3} _2Cu(YR')_ 2In(YR'_2]构造且产率高的三元单源前驱体的合成和热调制(E = P,As,Sb; Y =最重要的是,我们成功地制备了液态CuInS_2(CIS)单源前体(当R = Bu,Y = S和R'= Et或Pr时)。这些新化合物被用于二硫化铜铟的喷射化学气相沉积(CVD),这是制造薄膜太阳能电池的吸收层,热重分析(TGA)和差示扫描量热法(DSC)证明了空间的可控操纵五族供体和/或硫族化物部分的电子和电子性质可以直接调节前体的热稳定性和物理性质初步研究表明,这些衍生物在低温下可生成CuInS_2薄膜X射线衍射研究,EDS SEM确认形成了单相CuInS_2薄膜。

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