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Thin film fabrication of nano-porous 12CaO·7Al_2O_3 crystal and its conversion into transparent conductive films by light illumination

机译:纳米多孔12CaO·7Al_2O_3晶体的薄膜制备及其光照明转化为透明导电膜

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摘要

Thin film fabrication of crystalline 12CaO·7Al_2O_3 (C12A7) with zeolitic structure was examined, and their electrical and optical properties were measured. Polycrystalline thin films were prepared by post-annealing of amorphous films in oxygen atmosphere at temperatures above 800℃. Choice of substrates was crucial for obtaining single-phase thin films. Although various oxide substrates (single crystals of Al_2O_3, Y-stabilized ZrO_2, MgO and silica glass) were examined, single-phase films were obtained only for MgO substrates and the other substrates reacted with the CaO component in the films during post-annealing. The optical band gap of C12A7 was evaluated to be 5.9 eV. Hydride ions were incorporated into the film by a thermal treatment in a hydrogen atmosphere at 1200℃. The resulting transparent thin films were converted into transparent persistent electronic conductors exhibiting an electrical conductivity 6.2 X 10~(-1) S cm~(-1) at 300 K by ultraviolet light illumination. This is the first example of transparent conductive thin film in which conductive areas can be patterned directly by light.
机译:研究了具有沸石结构的晶体12CaO·7Al_2O_3(C12A7)的薄膜制备,并测量了其电学和光学性质。多晶薄膜是通过在800℃以上的氧气气氛中对非晶薄膜进行后退火而制得的。基板的选择对于获得单相薄膜至关重要。尽管检查了各种氧化物衬底(Al_2O_3的单晶,Y稳定的ZrO_2,MgO和石英玻璃),但仅在MgO衬底上获得了单相膜,其他衬底在退火后与膜中的CaO成分发生了反应。 C12A7的光学带隙被评估为5.9eV。通过在1200℃的氢气氛中进行热处理,将氢化物离子掺入薄膜中。通过紫外线照射,将所得的透明薄膜转变为在300K下显示出6.2×10-(-1)S cm-(-1)电导率的透明的持久性电子导体。这是透明导电薄膜的第一个例子,其中可以通过光直接图案化导电区域。

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