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首页> 外文期刊>Thin Solid Films >Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O_3 and ECR oxygen plasma cleaning methods
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Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O_3 and ECR oxygen plasma cleaning methods

机译:比较UV / O_3和ECR氧等离子体清洗方法对塑料盒中存储的硅晶片上有机污染物的去除效率

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摘要

When wafers are stored in a plastic storage box to protect them from airborne contaminants, volatile organics from the polymeric construction material adsorb onto the wafer surface. Both UV/O_3 and ECR oxygen plasma techniques have been found to completely remove these organic contaminants adsorbed on the silicon surfaces up to the detection limit. After cleaning, Si wafers were characterized using attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and atomic force microscopy (AFM). Organic contaminants were eliminated more efficiently by the ECR oxygen plasma technique than the UV/ O_3 technique when they were employed under optimum process conditions.
机译:当将晶片存储在塑料储物箱中以保护其免受空气中污染物的侵害时,聚合建筑材料中的挥发性有机物会吸附到晶片表面上。已经发现UV / O_3和ECR氧等离子体技术都可以完全去除吸附在硅表面上的这些有机污染物,直到检测极限为止。清洗后,使用衰减全反射-傅立叶变换红外光谱(ATR-FTIR)和原子力显微镜(AFM)对硅晶片进行表征。在最佳工艺条件下使用ECR氧等离子体技术比使用UV / O_3技术可以更有效地消除有机污染物。

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