Monte Carlo simulations on large-area deposition of amorphous silicon by hot-wire CVD

摘要

Scale-up of hot-wire CVD reactors for commercial production of a-Si:H based solar cells requires understanding of the large-area deposition process. Therefore, the process was simulated using the Direct Simulation Monte Carlo-method (G.A. Bird, Clarendon Press, Oxford (1994)), considering reactions at the filaments, in the gas phase and at the substrate, and in particular large-area deposition by modeling the gas shower and the filament grid, which were found to determine the uniformity and quality of the a-Si:H films (Thin Solid Films 395 (2001) 61; Solar Energy Mater. Solar Cells 73 (2002) 321). The distance between the filament grid and the substrate (d(fil-S)) and the distance between the filaments (d(fil)) were systematically varied, and the simulation results were compared to experimental results obtained in our large-area deposition system (Thin Solid Films 395 (2001) 61: Solar Energy Mater. Solar Cells 73 (2002) 321). The experimentally obtained optimum filament-to-substrate distance was supported by an optima in the simulated Si2H4-concentration. For other species, the existence was confirmed but a definite value for optimum d(fil-s) could not be concluded. The simulations also confirmed the influence of the filament geometry on the uniformity as obtained in the experiments. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 16]