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Thermal stability of ultrathin titanium films on a Pt(111) substrate

机译:Pt(111)基底上的超薄钛膜的热稳定性

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We report annealing studies using He+-ion scattering spectroscopy (He+-ISS) and X-ray photoelectron spectroscopy (XPS) to evaluate the thermal stability of ultrathin Ti films deposited on a Pt(111) single-crystal surface at 300 K. These results establish that strong Pt-Ti intermetallic bonding provides sufficient driving force for thermal interdiffusion of Ti and Pt at a (111)-oriented interface at 700 K (427 degreesC), even in the absence of oxygen and a minimal influence of grain boundaries. Identification of this critical temperature provides additional fundamental information for Ti/Pt bilayer film processing considerations. This data was obtained by using He+-ISS to monitor the concentration of Ti in the topmost surface layer as a function of temperature. In these studies, we define 1 dose unit (DU) to be the amount of deposited Ti that is required to eliminate the Pt signal in He+-ISS. This amount should be close to that required to produce a one-monolayer Ti film, but it could exceed one monolayer of Ti if alloying or clustering occurs on the substrate at 300 K under these deposition conditions. for Ti films less than 1 DU, heating to 700 K slightly decreased the Ti surface concentration. Higher annealing temperatures of up to 950 K caused extensive loss of surface Ti, and this is attributed to Ti diffusion into the Pt crystal sub-surface region. For a 1-DU Ti film, temperatures of 750800 K were required to cause sufficient interdiffusion so that Pt atoms were detected in the topmost layer, strongly suggesting that the 1-DU Ti film was more thermally stable than those of lower Ti coverage. Thicker Ti films of greater than 1 DU required temperatures of 800-1050 K before any change was detected in the Ti surface concentration as probed by the He+-ISS signal intensity. After annealing to temperatures higher than 1000 K, XPS revealed a chemical shift for the Ti(2p) peaks of 1.5 eV to higher binding energy, indicating formation of a Ti/Pt alloy. (C) 2004 Elsevier B.V. All rights reserved.
机译:我们报告了使用He +离子散射光谱(He + -ISS)和X射线光电子能谱(XPS)进行的退火研究,以评估300 K下沉积在Pt(111)单晶表面上的超薄Ti膜的热稳定性。这些结果证实即使在没有氧气和最小晶界影响的情况下,牢固的Pt-Ti金属间键合也能为Ti和Pt在(111)取向的界面在700 K(427摄氏度)的热相互扩散提供足够的驱动力。此临界温度的确定为Ti / Pt双层薄膜处理的考虑提供了其他基本信息。该数据是通过使用He + -ISS监测最表面层中Ti的浓度随温度变化而获得的。在这些研究中,我们将1个剂量单位(DU)定义为消除He + -ISS中Pt信号所需的沉积Ti量。该量应接近产生单层Ti膜所需的量,但如果在这些沉积条件下在300 K的条件下在基材上发生合金化或成簇,则其量可能超过Ti的单层。对于小于1 DU的Ti膜,加热至700 K会稍微降低Ti表面浓度。高达950 K的较高退火温度导致表面Ti大量损失,这归因于Ti扩散到Pt晶体亚表面区域。对于1-DU Ti膜,需要750800 K的温度以引起足够的相互扩散,以便在最顶层检测到Pt原子,这强烈表明1-DU Ti膜比较低Ti覆盖率的膜更热稳定。大于1 DU的较厚Ti膜需要800-1050 K的温度,然后才能通过He + -ISS信号强度探测到Ti表面浓度发生任何变化。退火至高于1000 K的温度后,XPS显示1.5 eV的Ti(2p)峰的化学位移为更高的结合能,表明形成了Ti / Pt合金。 (C)2004 Elsevier B.V.保留所有权利。

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