X-ray photoelectron spectroscopy and low-energy electron diffraction study on the oxidation of NiAl(110) surfaces at elevated temperatures

摘要

We studied the growth of ultrathin alumina films on NiAl(110) substrates at elevated temperatures using LEED and XPS. We obtained a well-ordered alumina layer without additional annealing when we introduced oxygen at a pressure of 6.6 x 10~(-6) Pa and a substrate temperature of 1020 K. The alumina layer thicknesses were calculated using a uniform overlayer model, and 10.9 A of the alumina layer was obtained when the oxygen dose increased to 4000 L. The binding energies of Al 2p and O 1s for Al_2O_3 shifted to higher binding energy synchronously when the alumina layer increased in thickness during 1020 K oxidation.