Interfacial reactions and mechanism of C54 TiSi_2 phase formation enhanced by multi-thermal-shock method

摘要

It has been demonstrated that C54 TiSi_2 phase formation can be significantly enhanced by multi-thermal-shock (MTS) method. In this work, the enhancement mechanism of C54 phase formation and the interfacial reactions between TiSi_2 and Si were investigated. The results indicate that the semi-coherent interface between TiSi_2 C49 phase and Si substrate may be responsible for the rough surface of the TiSi_2/Si structure. However, the semi-coherent interface can be completely destroyed by multi-thermal-shock method, resulting in the smooth surface of the structure. It is believed that the multi-thermal-shock method induces numerous defects to increase the internal energy in the C49 phase, thus enhancing the C54 phase formation significantly.