Measurement of Young's modulus and residual stress of copper film electroplated on silicon wafer

摘要

The Young's modulus and residual stresses of electroplated copper film microbridges were measured. Special ceramic shaft structure was designed to solve the problem of getting the load-deflection curves of the microbridges from a nanoindentation system equipped with a normal Berkovich probe. Theoretical analysis of the load-deflection curves of the microbridges is proposed to evaluate the Young's modulus and residual stress of the copper films simultaneously. The calculated; results based on the experimental measurements showed that the average Young's modulus and residual stress of the electroplated copper films are 115.2 GPa and 19.3 MPa, respectively, while the Young's modulus measured by the nanoindenter for the same copper film with silicon substrate is 110+-1.67 GPa.