Material and device properties of single-phase Cu(In,Ga)(Se,S)_2 alloys prepared by selenization/sulfurization of metallic alloys

摘要

Single-phase Cu(In,Ga)(Se,S)_2 alloys have been prepared using a novel two-step selenization/sulfurization growth process to react copper-indium-gallium alloy films. The growth scheme differs critically from standard two-step growth processes and is based on the manipulation of the reaction kinetics in order to inhibit the formation of stable ternary phases. In the first step, the metallic precursors are reacted with H_2Se/Ar to produce a composite alloy containing a mixture of binary selenides and at least one partially reacted ternary alloy. The film is then exposed to H_2S/Ar at a defined temperature to produce uniform, single-phase pentenary Cu(In,Ga)(Se,S)_2 alloys. Solar cell results for Cu(In,Ga)(Se,S)_2 films with the S/(S + Se) ratio from 0.23 to 0.65 at a fixed Ga/(Ga + In) ratio are presented.