Raman scattering and photoluminescence analysis of B-doped CdS thin films

摘要

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-Ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films have a hexagonal structure with a preferential orientation of the (002) plane. The grain size of B-doped CdS films slightly decreases, but no change of the microstructure was observed. The PL spectra for all samples consist of two prominent broad bands approximately 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films.