Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb, Nb)(Zr, Sn, Ti)O_3 thin films

摘要

The (Pb, Nb)(Zr, Sn, Ti)O_3 (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods, Films derived on the LNO/Pt/Ti/SiO_2/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO_2/Si and LNO/Pt/Ti/SiO_2/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferroelectric (FE) switching field E_(AFE-FE), FE to AFE switching field E_(FE-AFE) and the hysteresis Δ_E = E_(AFE-FE) - E_(FE-AFE).