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Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

机译:退火对阴极电沉积ZnO薄膜光学性能的影响

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摘要

(001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 degrees C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (-0.6 similar to-0.8 V). When more negative potential (-1.0 similar to-1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials -0.6 similar to - 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E-g) of the ZnO film prepared at -1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH)(2) from the film after annealing. (c) 2005 Elsevier B.V. All rights reserved.
机译:通过阴极电沉积,在65摄氏度下由仅包含0.05 M硝酸锌的水溶液合成Zn衬底上的(001)取向ZnO薄膜。在3.34 eV附近的束缚激子发射带以及三个纵向光学(LO)声子复制体和从以更高的正电位(-0.6类似于-0.8 V)制备的ZnO薄膜的光致发光(PL)光谱中观察到了约2.17 eV的密集宽发射带。当施加更多的负电势(-1.0类似于-1.4 V)时,紫外线发射带消失。这些结果表明,更多的正电沉积电位有利于高质量ZnO薄膜的生长。在更高的正电沉积电位-0.6与-1.0 V相似下制备的退火ZnO薄膜的PL光谱在3.35 eV处显示紫外线发射,而缺陷产生的发射微不足道。退火导致激子发射带的增强和锐化以及深能级发射的减小。在铟锡氧化物(ITO)衬底上以-1.0 V制备的ZnO薄膜的带隙(E-g)从3.56降至3.29 eV,这是由于退火后从薄膜中去除了Zn(OH)(2)。 (c)2005 Elsevier B.V.保留所有权利。

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