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Electrical conductivity as a measure of the continuity of titanium and vanadium thin films

机译:电导率作为钛和钒薄膜连续性的量度

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We investigate titanium (Ti) and vanadium (V) film growth on amorphous carbon (a-C) and silicon oxide NOD substrates using in situ electrical conductivity measurements and electron microscopy. The aim is to determine the minimum thickness of a continuous layer so that multilayer coatings of fine period can be constructed. We applied a model for thin film metallic conduction to develop a criterion for the onset of electrical continuity. We found that this onset coincides with the minimum in a curve of Rt(2) as a function t, where R is the film resistance and t is the film thickness. For these film/substrate combinations, we found minimum layer thicknesses of between 2.5 and 3 nm are possible. (C) 2004 Elsevier B.V. All rights reserved.
机译:我们使用原位电导率测量和电子显微镜研究了非晶碳(a-C)和氧化硅NOD衬底上钛(Ti)和钒(V)膜的生长。目的是确定连续层的最小厚度,以便可以构造精细周期的多层涂层。我们应用了薄膜金属传导模型来制定电连续性发作的标准。我们发现,该起始点与Rt(2)随函数t的曲线中的最小值一致,其中R为薄膜电阻,t为薄膜厚度。对于这些膜/基材组合,我们发现最小层厚度在2.5到3 nm之间是可能的。 (C)2004 Elsevier B.V.保留所有权利。

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