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Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

机译:脉冲激光沉积和超声喷雾热解生长ZnO薄膜的结构和光致发光性能比较

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摘要

ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP.
机译:分别通过脉冲激光沉积(PLD)和超声喷雾热解(USP)方法沉积ZnO薄膜。 X射线衍射和透射电子显微镜表征表明,PLD生长的ZnO膜比USP生长的具有更好的结晶度。光致发光光谱表明,与USP相比,PLD所生长的薄膜的近带边缘紫外发射更窄,并转移到更高的能量。在可见光范围内,PLD生长的ZnO薄膜分别以470 nm,486 nm,544 nm和613 nm为中心呈现四个局部能级发射,而USP生长的薄膜仅以502 nm为中心呈现较弱的宽带发射。霍尔测量显示,与USP相比,PLD生长的ZnO薄膜具有更高的载流子密度和更低的霍尔迁移率。固有缺陷的较高密度和较高的结晶度被认为是造成PLD生长的ZnO薄膜与USP生长的薄膜的光致发光差异的原因。

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