Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications

摘要

Basic parameters of Hall sensor structures obtained from InSb thin films epitaxially grown on insulating GaAs are presented and discussed. The structures show very low temperature coefficients both of the input/output resistance, α, and the magnetic sensitivity, β, in the temperature range from 1.8 K to 280 K. They are α ≈ 10~(-4)/K and β ≈ 10~(-6)/K. The departure from the linearity of the Hall voltage, in the magnetic field range from 0.1 T to 14 T, is also low, of about 0.1%. The InSb layers do not show any Shubnikov-de Hass oscillations at 4.2. Ageing effects in the films are negligible.