Diluted magnetic semiconductor Ge_(1-x)Mn_xTe films prepared by molecular beam epitaxy

摘要

We report the growth of Ⅳ-Ⅵ diluted magnetic semiconductor Ge_(1-x)Mn_xTe thin films on BaF_2 (111) substrates with high Mn ion concentration (x=0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization.