Uniform CoSi_2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer

摘要

The nucleation stage toward CoSi_2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/ Ti/Co/SiO_x/Si multilayer with the SiO_x as a mediated layer by annealing at 460℃ for 240 s followed by 600℃ 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600℃ 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460℃ 240 s followed by 600℃ 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.