Development of ruthenium dioxide electrodes for pyroelectric devices based on lithium tantalate thin films

摘要

The aim of this paper is the study of ruthenium dioxide (RuO_2) films, grown on low-stress silicon nitride on silicon (SiN_x/Si), in order to develop thermal micro-sensors based on pyroelectric effect. The active part of these micro-sensors is constituted by a new arrangement: lithium tantalate (LiTaO_3)/RuO_2/SiN_x/Si. Radio-frequency (RF) sputtering is employed to deposit RuO_2 on SiN_x/Si substrate. Morphology, crystallinity and resistivity of RuO_2 are studied as function of growth parameters. Next, RF magnetron sputtering was used to deposit LiTaO_3 on this electrode. Morphology studies, pyroelectric effect and dielectric parameters obtained, indicate that RuO_2 material is a suitable candidate as back electrode for LiTaO_3 thin films.