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Morphology control of highly-transparent indium tin oxide thin films prepared by a chlorine-reduced metallo-organic decomposition technique

机译:氯还原金属有机分解技术制备的高透明铟锡氧化物薄膜的形貌控制

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摘要

Indium tin oxide thin films were prepared by a chemical solution deposition route based on a one pot reaction of indium acetate, tin tetrachloride pentahydrate and propionic acid. The films were heat-treated in oxidising atmosphere and post-annealed in forming gas containing 10% hydrogen. It was found that the coating solution concentration exerted a major influence on the morphology of the films. Low-concentrated solutions yielded layers with columnar structure while higher molarities led to fine-grained granular films. Under optimised conditions, thin films of indium tin oxide exhibiting a resistivity of 1 · 10~(-3) Ω cm were obtained. The transparency was determined to a high level of above 90% in the entire visible range of the spectrum.
机译:基于乙酸铟,四氯化锡五水合锡和丙酸的一锅法反应,通过化学溶液沉积路线制备氧化铟锡薄膜。在氧化气氛中对膜进行热处理,并在包含10%氢的形成气体中进行后退火。发现涂布溶液的浓度对膜的形态具有主要影响。低浓度溶液产生具有柱状结构的层,而较高的摩尔浓度导致形成细粒状颗粒膜。在最佳条件下,获得了电阻率为1·10〜(-3)Ωcm的铟锡氧化物薄膜。在整个光谱可见范围内,透明度被确定为高于90%的高水平。

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