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首页> 外文期刊>Thin Solid Films >Epitaxial growth of TiO_2 thin films on SrTiO_3, LaAlO_3 and yttria-stabilized zirconia substrates by electron beam evaporation
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Epitaxial growth of TiO_2 thin films on SrTiO_3, LaAlO_3 and yttria-stabilized zirconia substrates by electron beam evaporation

机译:电子束蒸发在SrTiO_3,LaAlO_3和氧化钇稳定的氧化锆衬底上外延生长TiO_2薄膜

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摘要

Epitaxial anatase, rutile and mixed (brookite and anatase) TiO_2 thin films have been obtained by reactive electron beam evaporation. Anatase TiO_2 thin films have been prepared on LaAlO_3 (LAO) and SrTiO_3 (STO) substrates of (100) and (110) orientation. The epitaxial relationship between anatase films (A) and (110) LAO/STO substrates is (012) A ‖ (110) LAO/STO, [100] A ‖ [001] LAO/STO. The anatase films were transformed into a cubic structure similar to TiO when in situ exposed to an electron beam. On the other hand, TiO_2 thin films with a mixture of epitaxial anatase and brookite grains have been grown on (100)-oriented yttria-stabilized zirconia (YSZ) at a substrate temperature of 600℃ while the pure rutile phase has been obtained at a substrate temperature of 900℃ on (100) YSZ. The crystalline structure and surface morphology of the thin films were investigated by X-ray diffraction, transmission electron microscopy and atomic force microscopy. The crystallographic reason for the epitaxy between anatase films and perovskite substrates is discussed.
机译:通过反应电子束蒸发获得了外延锐钛矿,金红石型和混合型(板钛矿型和锐钛矿型)TiO_2薄膜。在(100)和(110)取向的LaAlO_3(LAO)和SrTiO_3(STO)衬底上制备了锐钛矿型TiO_2薄膜。锐钛矿薄膜(A)和(110)LAO / STO衬底之间的外延关系为(012)A‖(110)LAO / STO,[100] A‖[001] LAO / STO。当原位暴露于电子束时,锐钛矿薄膜转变为类似于TiO的立方结构。另一方面,在600衬底温度下,在(100)取向的氧化钇稳定的氧化锆(YSZ)上生长了具有外延锐钛矿和板钛矿颗粒混合物的TiO_2薄膜,而在600℃获得了纯金红石相。 (100)YSZ上衬底温度为900℃。通过X射线衍射,透射电子显微镜和原子力显微镜研究了薄膜的晶体结构和表面形态。讨论了锐钛矿型薄膜和钙钛矿基质之间外延的晶体学原因。

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