Enhancement in electrical and optical properties of indium tin oxide thin films grown using a pulsed laser deposition at room temperature by two-step process

摘要

The optical and electrical properties of indium tin oxide (ITO) thin films deposited using a pulsed laser deposition at room temperature can be substantially enhanced by adopting a two-step process. X-ray diffraction patterns and atomic force microscopy images were used to observe the structural properties of the films. High quality ITO films grown by two-step process could be obtained with the resistivity of 3.02 x 10~(-4) Ω cm, the carrier mobility of 32.07 cm~2 /Vs, and the transparency above 90% in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.