Electrical, structural, and optical properties of Cr-doped and non-stoichiometric V_2O_3 thin films

摘要

V_2O_3 films and Cr-doped V_2O_3 films were grown on (0001) (C-plane) and (1120) (A-plane) oriented sapphire substrates by the reduction of sol-gel derived vanadium oxide films. Examination by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy showed the films to be comprised of highly oriented grains. Optical transmission and resistivity measurements revealed phase transitions characteristic of the single crystal V_2O_3 and Cr-doped V_2O_3. Subsequent anneals of the un-doped films under controlled oxygen atmospheres yielded non-stoichiometric films with metal-insulator transitions characteristic of annealed V_2O_3 single crystals.