Electrical characterization of semiconducting V and Pd-doped TiO_2 thin films on silicon by impedance spectroscopy

摘要

Thin films of TiO_2 doped with vanadium and palladium were deposited by magnetron sputtering method onto silicon substrates. The analysis of the experimental spectra of capacitance and conductance measured over a wide frequency range led to the identification of the three relaxation processes associated with the physical phenomena in various regions of the investigated structure.