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Longitudinal and transversal piezoresistive effect in hydrogenated amorphous carbon films

机译:氢化非晶碳膜的纵向和横向压阻效应

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摘要

We report a large piezoresistive effect of the plasma assisted chemical vapor deposited hydrogenated amorphous carbon (a-C:H) films deposited at bias voltages of-350 and - 800 V. The gauge factors were measured in transversal, longitudinal strain configurations and lateral, vertical current flow directions with respect to the layer surface. The gauge factor measurements were performed in the temperature range of 23-60 ℃. A model is proposed to explain the origin of piezoresistive effect in the a-C:H films. From the experimental results we suggest the parameters which can further enhance the gauge factor values in the films.
机译:我们报告了在-350和-800 V偏置电压下沉积的等离子体辅助化学气相沉积氢化非晶碳(aC:H)膜的大压阻效应。在横向,纵向应变配置以及横向,纵向电流中测量了应变系数相对于层表面的流动方向。在23-60℃的温度范围内进行量规系数的测量。提出了一个模型来解释a-C:H薄膜中压阻效应的起源。从实验结果中,我们提出了可以进一步提高膜中规格因子值的参数。

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